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HN29W12811T-60 - 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811T-60_1873602.PDF Datasheet
 Full text search : 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

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HN29W12811T-60 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
 Hitachi Semiconductor
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
 Spansion, Inc.
SPANSION LLC
K9T1G08U0M 128M x 8 Bits NAND Flash Memory
 http://
K9T1G08U0M 128M x 8 Bits NAND Flash Memory
 SAMSUNG[Samsung semiconductor]
MX29LV128DB 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
 Macronix International
MX29LV128DBT2C-90Q 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
 Macronix International
AT49SN12804 128M bit, 1.8-Volt Page Mode Flash Memory.
 Atmel
MX25L12836EMI10G MX25L12836EZNI10G 128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
 Macronix International
W25Q128BVFIG W25Q128BVFIP W25Q128BVCIG W25Q128BVCI 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
 Winbond
M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
 Renesas Electronics Corporation.
 
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